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SSF7NS60D Datasheet 600v N-channel MOSFET

Manufacturer: GOOD-ARK

Overview: Main Product Characteristics VDSS RDS(on) ID 600V 0.56Ω (typ.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The SSF7NS60D series MOSFET is a new technology, which bines an innovative super junction technology and advance process.

This new technology achieves low R DS (ON), energy saving, high reliability and uniformity, superior power density and space saving.

Absolute Max Rating Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS EAS IAR TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current ② Power Dissipation ③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=15.2mH Avalanche Current @ L=15.2mH Operating Junction and Storage Temperature Range Max.

Key Features

  • High dv/dt and avalanche capabilities.
  • 100% avalanche tested.
  • Low input capacitance and gate charge.
  • Low gate input resistance.
  • Lead free product TO-252 SSF7NS60D 600V N-Channel MOSFET Marking and Pin Assignment Schematic Diagram.

SSF7NS60D Distributor