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SSF8N60 - 600V N-Channel MOSFET

Download the SSF8N60 datasheet PDF. This datasheet also covers the SSF8N60-GOOD variant, as both devices belong to the same 600v n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The SSF8N60 is a new generation of high voltage N Channel enhancement mode power MOSFETs and is obtained through an extreme optimization layout design, in additional to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability, provide superior sw

Key Features

  • Extremely high dv/dt capability.
  • Low Gate Charge Qg results in Simple Drive Requirement.
  • 100% avalanche tested.
  • Gate charge minimized.
  • Very low intrinsic capacitances.
  • Very good manufacturing repeatability.
  • Lead free product.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SSF8N60-GOOD-ARK.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SSF8N60
Manufacturer GOOD-ARK
File Size 1.12 MB
Description 600V N-Channel MOSFET
Datasheet download datasheet SSF8N60 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FEATURES ■ Extremely high dv/dt capability ■ Low Gate Charge Qg results in Simple Drive Requirement ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability ■ Lead free product DESCRIPTION The SSF8N60 is a new generation of high voltage N–Channel enhancement mode power MOSFETs and is obtained through an extreme optimization layout design, in additional to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability, provide superior switching performance, withstand high energy pulse in the avalanche, and increases packing density.