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Features
Silicon Epitaxial Planar Diode For general purpose and switching
Mechanical Data
Case: DO-34, DO-35 Glass Case Weight: approx. 0.13g
1N914
Small-Signal Diode Fast Switching Diode
Maximum Ratings and Thermal Characteristics
(TA=25oC unless otherwise noted.)
Parameter
Symbol
Limit
Unit
Peak reverse voltage Average rectified current Power dissipation at Tamb=25oC Junction temperature
V
100
Volts
RM
IF(AV)
75
mA
Ptot
500
mW
TJ
175
oC
Electrical Characteristics
(TJ=25oC unless otherwise noted.)
Parameter
Symbol
Forward voltage drop
VF
Reverse current
IR
Reverse recovery time
trr
Capacitance
Ctot
Test Condition
IF=10mA
VR=20V VR=75V
IF=IR=10mA, VR=6V
RL=100Ω,
to
I =1mA
rr
VR=0, f=1.0MHz
Min.
Typ.
Max.
Unit
-
-
1.