• Part: G3S06505R
  • Description: 650V/5A Silicon Carbide Power Schottky Barrier Diode
  • Category: Diode
  • Manufacturer: GPT
  • Size: 612.64 KB
G3S06505R Datasheet (PDF) Download
GPT
G3S06505R

Key Features

  • Zero reverse recovery current
  • Zero forward recovery voltage
  • Temperature independent switching behavior
  • High temperature operation
  • High frequency operation Key Characteristics VRRM 650 V IF, Tc≤160℃ 5A QC 23 nC Benefits
  • Unipolar rectifier
  • Substantially reduced switching losses
  • No thermal run-away with parallel devices
  • Reduced heat sink requirements