• Part: G3S06505R
  • Description: 650V/5A Silicon Carbide Power Schottky Barrier Diode
  • Manufacturer: GPT
  • Size: 612.64 KB
Download G3S06505R Datasheet PDF
G3S06505R page 2
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G3S06505R page 3
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G3S06505R Key Features

  • Zero reverse recovery current
  • Zero forward recovery voltage
  • Temperature independent switching behavior
  • High temperature operation
  • High frequency operation
  • Unipolar rectifier
  • Substantially reduced switching losses
  • No thermal run-away with parallel devices
  • Reduced heat sink requirements