Full PDF Text Transcription for G3S06505R (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
G3S06505R. For precise diagrams, and layout, please refer to the original PDF.
Datasheet V2020.A.1 G3S06505R 650V/5A Silicon Carbide Power Schottky Barrier Diode Features • Zero reverse recovery current • Zero forward recovery voltage • Temperature ...
View more extracted text
everse recovery current • Zero forward recovery voltage • Temperature independent switching behavior • High temperature operation • High frequency operation Key Characteristics VRRM 650 V IF, Tc≤160℃ 5A QC 23 nC Benefits • Unipolar rectifier • Substantially reduced switching losses • No thermal run-away with parallel devices • Reduced heat sink requirements Applications • SMPS, e.g., CCM PFC; • Motor drives, Solar application, UPS, Wind turbine, Rail traction, EV/HEV Part No.