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G3S06505R - 650V/5A Silicon Carbide Power Schottky Barrier Diode

Features

  • Zero reverse recovery current.
  • Zero forward recovery voltage.
  • Temperature independent switching behavior.
  • High temperature operation.
  • High frequency operation Key Characteristics VRRM 650 V IF, Tc≤160℃ 5A QC 23 nC Benefits.
  • Unipolar rectifier.
  • Substantially reduced switching losses.
  • No thermal run-away with parallel devices.
  • Reduced heat sink requirements.

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Datasheet preview – G3S06505R

Datasheet Details

Part number G3S06505R
Manufacturer GPT
File Size 612.64 KB
Description 650V/5A Silicon Carbide Power Schottky Barrier Diode
Datasheet download datasheet G3S06505R Datasheet
Additional preview pages of the G3S06505R datasheet.

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Full PDF Text Transcription

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Datasheet V2020.A.1 G3S06505R 650V/5A Silicon Carbide Power Schottky Barrier Diode Features • Zero reverse recovery current • Zero forward recovery voltage • Temperature independent switching behavior • High temperature operation • High frequency operation Key Characteristics VRRM 650 V IF, Tc≤160℃ 5A QC 23 nC Benefits • Unipolar rectifier • Substantially reduced switching losses • No thermal run-away with parallel devices • Reduced heat sink requirements Applications • SMPS, e.g., CCM PFC; • Motor drives, Solar application, UPS, Wind turbine, Rail traction, EV/HEV Part No.
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