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G3S17050PM - 1700V 50A Silicon Carbide Power Schottky Barrier Diode

Features

  • Zero reverse recovery current.
  • Zero forward recovery voltage.
  • Temperature independent switching behavior.
  • High temperature operation.
  • High frequency operation Benefits.
  • Unipolar rectifier.
  • Substantially reduced switching losses.
  • No thermal run-away with parallel devices.
  • Reduced heat sink requirements.

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Datasheet preview – G3S17050PM

Datasheet Details

Part number G3S17050PM
Manufacturer GPT
File Size 1.20 MB
Description 1700V 50A Silicon Carbide Power Schottky Barrier Diode
Datasheet download datasheet G3S17050PM Datasheet
Additional preview pages of the G3S17050PM datasheet.

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Full PDF Text Transcription

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Datasheet V2021.A.0 G3S17050PM 1700V/ 50A Silicon Carbide Power Schottky Barrier Diode Features • Zero reverse recovery current • Zero forward recovery voltage • Temperature independent switching behavior • High temperature operation • High frequency operation Benefits • Unipolar rectifier • Substantially reduced switching losses • No thermal run-away with parallel devices • Reduced heat sink requirements Applications • SMPS, e.g., CCM PFC; • Motor drives, Solar application, UPS, Wind turbine, Rail traction, EV/HEV Key Characteristics VRRM 1700 V IF, Tc≤150℃ 50 A QC 391 nC Part No.
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