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GSD4903 - Dual-Channel MOS

Description

The GSD4903 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.

The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

Standard Product GSD4903 is Pb-free.

Features

  • N-channel.
  • VDS =30V,ID =25A RDS(ON).

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Datasheet Details

Part number GSD4903
Manufacturer GROUP
File Size 954.52 KB
Description Dual-Channel MOS
Datasheet download datasheet GSD4903 Datasheet

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GSD4903 Dual-Channel MOS Group-Semi N/P-Channel Complementary MOSFET GENERAL DESCRIPTION The GSD4903 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Standard Product GSD4903 is Pb-free. GSD4903 is electrically identical. GENERAL FEATURES N-channel ● VDS =30V,ID =25A RDS(ON) <12mΩ @ VGS=10V RDS(ON) <18mΩ @ VGS=4.5V P-channel ● VDS =-30V,ID =-19A RDS(ON) <24mΩ @ VGS=-10V RDS(ON) <30mΩ @ VGS=-4.
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