GSD4903 Overview
The GSD4903 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The plementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Standard Product GSD4903 is Pb-free.
GSD4903 Key Features
- VDS =30V,ID =25A RDS(ON) <12mΩ @ VGS=10V RDS(ON) <18mΩ @ VGS=4.5V
- VDS =-30V,ID =-19A RDS(ON) <24mΩ @ VGS=-10V RDS(ON) <30mΩ @ VGS=-4.5V
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- Special process technology for high ESD capability
- H-bridge
- Inverters