GS4288C09L - 288Mb CIO Low Latency DRAM

GSI Technology

Key Features

Pin- and function-compatible with Micron RLDRAM® II.
533 MHz DDR operation (1.067Gb/s/pin data rate).
38.4 Gb/s peak bandwidth (x36 at 533 MHz clock frequency).
8M x 36, 16M x 18, and 32M x 9 organizations available.
8 internal banks for concurrent operation and maximum bandwidth.
Reduced cycle time (15 ns at 533 MHz).
Address Multiplexing (Nonmultiplexed address option available).
SRAM-type interface.
Programmable.

GS4288C09L 288mb cio low latency dram by GSI Technology - Datasheet Preview

Datasheet Details

Part number	GS4288C09L
Manufacturer	GSI Technology
File Size	2.05 MB
Description	288Mb CIO Low Latency DRAM
Datasheet	GS4288C09L Datasheet

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Other Datasheets by GSI Technology

Part Number	Description
GS4288C09GL	288Mb CIO Low Latency DRAM
GS4288C18GL	288Mb CIO Low Latency DRAM
GS4288C18L	288Mb CIO Low Latency DRAM
GS4288C36GL	288Mb CIO Low Latency DRAM
GS4288C36L	288Mb CIO Low Latency DRAM

Full PDF Text Transcription (Reference)

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GS4288C09/18/36L 144-Ball BGA Commercial Temp Industrial Temp 32M x 9, 16M x 18, 8M x 36 288Mb CIO Low Latency DRAM (LLDRAM) II 533 MHz–300 MHz 2.5 V VEXT 1.8 V VDD 1.5 V or 1.8 V VDDQ Features • Pin- and function-compatible with Micron RLDRAM® II • 533 MHz DDR operation (1.067Gb/s/pin data rate) • 38.