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GS4576C36L Datasheet 576mb Cio Low Latency Dram

Manufacturer: GSI Technology

Overview: GS4576C09/18/36L 144-Ball BGA mercial Temp Industrial Temp 64M x 9, 32M x 18, 16M x 36 576Mb CIO Low Latency DRAM (LLDRAM II) 533 MHz–300 MHz 2.5 V VEXT 1.8 V VDD 1.5 V or 1.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  • Pin- and function-compatible with Micron RLDRAM® II.
  • 533 MHz DDR operation (1.067Gb/s/pin data rate).
  • 38.4 Gb/s peak bandwidth (x36 at 533 MHz clock frequency).
  • 16M x 36, 32M x 18, and 64M x 9 organizations available.
  • 8 banks.
  • Reduced cycle time (15 ns at 533 MHz).
  • Address Multiplexing (Nonmultiplexed address option available).
  • SRAM-type interface.
  • Programmable Read Latency (RL), row cycle time, and burst sequence.

More Datasheets from GSI Technology

Part Number Description
GS4576C36GL 576Mb CIO Low Latency DRAM
GS4576C36GM 576Mb CIO Low Latency DRAM
GS4576C09GL 576Mb CIO Low Latency DRAM
GS4576C09GM 576Mb CIO Low Latency DRAM
GS4576C09L 576Mb CIO Low Latency DRAM
GS4576C18GL 576Mb CIO Low Latency DRAM
GS4576C18GM 576Mb CIO Low Latency DRAM
GS4576C18L 576Mb CIO Low Latency DRAM
GS4288C09GL 288Mb CIO Low Latency DRAM
GS4288C09L 288Mb CIO Low Latency DRAM

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