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GS71116TU - (GS71116x) 64K x 16 1Mb Asynchronous SRAM

This page provides the datasheet information for the GS71116TU, a member of the GS71116TP (GS71116x) 64K x 16 1Mb Asynchronous SRAM family.

Datasheet Summary

Description

The GS71116 is a high speed CMOS static RAM organized as 65,536-words by 16-bits.

Static design eliminates the need for external clocks or timing strobes.

Operating on a single 3.3V power supply and all inputs and outputs are TTL compatible.

Features

  • Fast access time: 10, 12, 15ns.
  • CMOS low power operation: 100/85/70 mA at min. cycle time.
  • Single 3.3V ± 0.3V power supply.
  • All inputs and outputs are TTL compatible.
  • Byte control.
  • Fully static operation.
  • Industrial Temperature Option: -40° to 85°C.
  • Package line up J: 400mil, 44 pin SOJ package TP: 400mil, 44 pin TSOP Type II package U: 6 mm x 8 mm Fine Pitch Ball Grid Array package 64K x 16 1Mb Asynchronous SRAM SOJ 64K.

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Datasheet preview – GS71116TU

Datasheet Details

Part number GS71116TU
Manufacturer GSI Technology
File Size 181.61 KB
Description (GS71116x) 64K x 16 1Mb Asynchronous SRAM
Datasheet download datasheet GS71116TU Datasheet
Additional preview pages of the GS71116TU datasheet.

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Full PDF Text Transcription

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GS71116TP/J/U SOJ, TSOP, FP-BGA Commercial Temp Industrial Temp Features • Fast access time: 10, 12, 15ns • CMOS low power operation: 100/85/70 mA at min. cycle time. • Single 3.3V ± 0.3V power supply • All inputs and outputs are TTL compatible • Byte control • Fully static operation • Industrial Temperature Option: -40° to 85°C • Package line up J: 400mil, 44 pin SOJ package TP: 400mil, 44 pin TSOP Type II package U: 6 mm x 8 mm Fine Pitch Ball Grid Array package 64K x 16 1Mb Asynchronous SRAM SOJ 64K x 16 Pin Configuration A4 A3 A2 A1 A0 CE DQ1 DQ2 DQ3 DQ4 VDD VSS DQ5 DQ6 DQ7 DQ8 WE A15 A14 A13 A12 NC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 10, 12, 15ns 3.
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