GS73024AB
GS73024AB is 3Mb Asynchronous SRAM manufactured by GSI Technology.
BGA mercial Temp Industrial Temp
128K x 24 3Mb Asynchronous SRAM
8, 10, 12 ns 3.3 V VDD
Center VDD and VSS
Features
- Fast access time: 8, 10, 12 ns
- CMOS low power operation: 250/200/170 m A at minimum cycle time
- Single 3.3 V ± 0.3V power supply
- All inputs and outputs are TTL-patible
- Fully static operation
- Industrial Temperature Option:
- 40 to 85°C
- Package
B: 14 mm x 22 mm, 119-bump, 1.27mm pitch BGA GB: Ro HS-pliant 119-bump BGA-
Description
The GS73024A is a high speed CMOS Static RAM organized as 131,072 words by 24 bits. Static design eliminates the need for external clocks or timing strobes. Operating on a single 3.3 V power supply, and all inputs and outputs are TTL-patible. The GS73024A is available in a 119-bump BGA package.
Pin Descriptions
Symbol
A0 to A16 WE CE VDD
Description
Address input Write enable input Chip enable input
+3.3 V power supply
119-Bump Ball Grid Array Package
Symbol
DQ1 to DQ24 OE VSS
Description...