• Part: GS73024AB
  • Description: 3Mb Asynchronous SRAM
  • Manufacturer: GSI Technology
  • Size: 466.51 KB
Download GS73024AB Datasheet PDF
GSI Technology
GS73024AB
GS73024AB is 3Mb Asynchronous SRAM manufactured by GSI Technology.
BGA mercial Temp Industrial Temp 128K x 24 3Mb Asynchronous SRAM 8, 10, 12 ns 3.3 V VDD Center VDD and VSS Features - Fast access time: 8, 10, 12 ns - CMOS low power operation: 250/200/170 m A at minimum cycle time - Single 3.3 V ± 0.3V power supply - All inputs and outputs are TTL-patible - Fully static operation - Industrial Temperature Option: - 40 to 85°C - Package B: 14 mm x 22 mm, 119-bump, 1.27mm pitch BGA GB: Ro HS-pliant 119-bump BGA- Description The GS73024A is a high speed CMOS Static RAM organized as 131,072 words by 24 bits. Static design eliminates the need for external clocks or timing strobes. Operating on a single 3.3 V power supply, and all inputs and outputs are TTL-patible. The GS73024A is available in a 119-bump BGA package. Pin Descriptions Symbol A0 to A16 WE CE VDD Description Address input Write enable input Chip enable input +3.3 V power supply 119-Bump Ball Grid Array Package Symbol DQ1 to DQ24 OE VSS Description...