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GS74104TP - 1M x 4 4Mb Asynchronous SRAM

This page provides the datasheet information for the GS74104TP, a member of the GS74104J 1M x 4 4Mb Asynchronous SRAM family.

Datasheet Summary

Description

The GS74104 is a high speed CMOS Static RAM organized as 1,048,576 words by 4 bits.

Static design eliminates the need for external clocks or timing strobes.

The GS operates on a single 3.3 V power supply and all inputs and outputs are TTL-compatible.

Features

  • Fast access time: 8, 10, 12, 15 ns.
  • CMOS low power operation: 150/125/110/90 mA at minimum cycle time.
  • Single 3.3 V ± 0.3 V power supply.
  • All inputs and outputs are TTL-compatible.
  • Fully static operation.
  • Industrial Temperature Option:.
  • 40° to 85°C.
  • Package line up J: 400 mil, 32-pin SOJ package TP: 400 mil, 44-pin TSOP Type II package 1M x 4 4Mb Asynchronous SRAM SOJ 1M x 4-Pin Configuraton A4 A3 A2 A1 A0 CE DQ1 VDD VSS D.

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Datasheet preview – GS74104TP

Datasheet Details

Part number GS74104TP
Manufacturer GSI Technology
File Size 388.11 KB
Description 1M x 4 4Mb Asynchronous SRAM
Datasheet download datasheet GS74104TP Datasheet
Additional preview pages of the GS74104TP datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com GS74104TP/J SOJ, TSOP Commercial Temp Industrial Temp Features • Fast access time: 8, 10, 12, 15 ns • CMOS low power operation: 150/125/110/90 mA at minimum cycle time. • Single 3.3 V ± 0.3 V power supply • All inputs and outputs are TTL-compatible • Fully static operation • Industrial Temperature Option: –40° to 85°C • Package line up J: 400 mil, 32-pin SOJ package TP: 400 mil, 44-pin TSOP Type II package 1M x 4 4Mb Asynchronous SRAM SOJ 1M x 4-Pin Configuraton A4 A3 A2 A1 A0 CE DQ1 VDD VSS DQ2 WE A19 A18 A17 A16 A15 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 8, 10, 12, 15 ns 3.3 V VDD Center VDD and VSS 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 32-pin 400 mil SOJ Description The GS74104 is a high speed CMOS Static RAM organized as 1,048,576 words by 4 bits.
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