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GS74116TJ - 256K x 16 4Mb Asynchronous SRAM

This page provides the datasheet information for the GS74116TJ, a member of the GS74116TP 256K x 16 4Mb Asynchronous SRAM family.

Datasheet Summary

Description

The GS74116 is a high speed CMOS static RAM organized as 262,144-words by 16-bits.

Static design eliminates the need for external clocks or timing strobes.

Operating on a single 3.3V power supply and all inputs and outputs are TTL compatible.

Features

  • Fast access time: 8, 10, 12, 15ns.
  • CMOS low power operation: 170/145/130/110 mA at min. cycle time.
  • Single 3.3V ± 0.3V power supply.
  • All inputs and outputs are TTL compatible.
  • Byte control.
  • Fully static operation.
  • Industrial Temperature Option: -40° to 85°C.
  • Package line up J: 400mil, 44 pin SOJ package TP: 400mil, 44 pin TSOP Type II package U: 7.20mm x 11.65mm Fine Pitch Ball Grid Array package 256K x 16 4Mb Asynchronous.

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Datasheet preview – GS74116TJ

Datasheet Details

Part number GS74116TJ
Manufacturer GSI Technology
File Size 153.81 KB
Description 256K x 16 4Mb Asynchronous SRAM
Datasheet download datasheet GS74116TJ Datasheet
Additional preview pages of the GS74116TJ datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com GS74116TP/J/U SOJ, TSOP, FP-BGA Commercial Temp Industrial Temp Features • Fast access time: 8, 10, 12, 15ns • CMOS low power operation: 170/145/130/110 mA at min.cycle time. • Single 3.3V ± 0.3V power supply • All inputs and outputs are TTL compatible • Byte control • Fully static operation • Industrial Temperature Option: -40° to 85°C • Package line up J: 400mil, 44 pin SOJ package TP: 400mil, 44 pin TSOP Type II package U: 7.20mm x 11.65mm Fine Pitch Ball Grid Array package 256K x 16 4Mb Asynchronous SRAM SOJ 256K x 16 Pin Configuration A4 A3 A2 A1 A0 CE DQ1 DQ2 DQ3 DQ4 VDD VSS DQ5 DQ6 DQ7 DQ8 WE A15 A14 A13 A12 A16 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 8, 10, 12, 15ns 3.
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