GSI Technology GS78116B
The GS78116 is a high speed CMOS static RAM organized as 524,288-words by 16-bits. The GS78116 operates on a single 3.3 V power supply and all inputs and outputs are TTLcompatible. The GS78116 is available in 14 mm x 22 mm BGA package.FEATURES
● Fast access time: 10, 12, 15 ns● CMOS low power operation: 300/250/220/180 mA at minimum cycle time
● Single 3.3 V ± 0.3 V power supply
● All inputs and outputs are TTL-compatible
● Fully static operation
● Industrial Temperature Option: –40° to 85°C
● 14 mm x 22 mm, 119-Bump, 1.27 mm Pitch Ball Grid Array package 512K x 16 8Mb Asynchronous SRAM Pin Descriptions Symbol A0 to A18 DQ1 to DQ16 CE WE OE VDD VSS NC 10, 12, 15 ns 3.3 V VDD
DESCRIPTION
Address input Data input/output Chip enable input Write enable input Output enable input +3.3 V power supply Ground No connectDESCRIPTION
Static design eliminates the need for external clocks or timing strobes. Block Diagram A0 Address Input Buffer Row Decoder Memory Array A18 CE WE OE Column Decoder Control I/O Buffer DQ1 DQ16 Rev: 1.02 9/2001 For latest documentation see 1/11 © 1999, Giga Semiconductor, Inc. GS78116B 512K x 16 Async SRAM in 119-Bump, 14 mm x 22 mm Top View 1 A B C D E F G H J K L M N P R T U NC NC, VSS NC NC DQ1...