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GS81302S09E

Manufacturer: GSI Technology

This datasheet includes multiple variants, all published together in a single manufacturer document.

GS81302S09E datasheet preview

Datasheet Details

Part number GS81302S09E
Datasheet GS81302S09E GS81302S08E-375 Datasheet (PDF)
File Size 496.83 KB
Manufacturer GSI Technology
Description 144Mb SigmaSIO DDR -II Burst of 2 SRAM
GS81302S09E page 2 GS81302S09E page 3

GS81302S09E Overview

GS81302S08/09/18/36E-375/350/333/300/250 165-Bump BGA mercial Temp Industrial Temp 144Mb SigmaSIOTM DDR -II Burst of 2 SRAM 375 MHz 250 MHz 1.8 V VDD 1.8 V and 1.5.

GS81302S09E Key Features

  • Simultaneous Read and Write SigmaSIO™ Interface
  • JEDEC-standard pinout and package
  • Dual Double Data Rate interface
  • Byte Write controls sampled at data-in time
  • DLL circuitry for wide output data valid window and future
  • Burst of 2 Read and Write
  • 1.8 V +100/-100 mV core power supply
  • 1.5 V or 1.8 V HSTL Interface
  • Pipelined read operation
  • Fully coherent read and write pipelines
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More Datasheets from GSI Technology

See all GSI Technology datasheets

Part Number Description
GS81302S09GE 144Mb SigmaSIO DDR -II Burst of 2 SRAM
GS81302S08E 144Mb SigmaSIO DDR -II Burst of 2 SRAM
GS81302S08GE 144Mb SigmaSIO DDR -II Burst of 2 SRAM
GS81302S18E 144Mb SigmaSIO DDR -II Burst of 2 SRAM
GS81302S18GE 144Mb SigmaSIO DDR -II Burst of 2 SRAM
GS81302S36E 144Mb SigmaSIO DDR -II Burst of 2 SRAM
GS81302S36GE 144Mb SigmaSIO DDR -II Burst of 2 SRAM
GS81302D06E-350 144Mb SigmaQuad-II+ Burst of 4 SRAM
GS81302D06E-350I 144Mb SigmaQuad-II+ Burst of 4 SRAM
GS81302D06E-400 144Mb SigmaQuad-II+ Burst of 4 SRAM

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