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GS81302T06E Datasheet

Manufacturer: GSI Technology

This datasheet includes multiple variants, all published together in a single manufacturer document.

GS81302T06E datasheet preview

Datasheet Details

Part number GS81302T06E
Datasheet GS81302T06E GS81302T06E-500 Datasheet (PDF)
File Size 216.98 KB
Manufacturer GSI Technology
Description 144Mb SigmaDDR-II+ Burst of 2 SRAM
GS81302T06E page 2 GS81302T06E page 3

GS81302T06E Overview

GS81302T06/11/20/38E-500/450/400/350 165-Bump BGA mercial Temp Industrial Temp 144Mb SigmaDDRTM-II+ Burst of 2 SRAM 500 MHz 350 MHz 1.8 V VDD 1.8 V or 1.5.

GS81302T06E Key Features

  • 2.5 Clock Latency
  • Simultaneous Read and Write SigmaDDRTM Interface
  • JEDEC-standard pinout and package
  • Double Data Rate interface
  • Byte Write controls sampled at data-in time
  • Burst of 2 Read and Write
  • On-Die Termination (ODT) on Data (D), Byte Write (BW)
  • 1.8 V +100/-100 mV core power supply
  • 1.5 V or 1.8 V HSTL Interface
  • Pipelined read operation
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More Datasheets from GSI Technology

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Part Number Description
GS81302T06GE 144Mb SigmaDDR-II+ Burst of 2 SRAM
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GS81302T07GE 144Mb SigmaDDR-II+ Burst of 2 SRAM
GS81302T107E 144Mb SigmaDDR-II+ Burst of 2 SRAM
GS81302T10E 144Mb SigmaDDR-II+ Burst of 2 SRAM
GS81302T10GE 144Mb SigmaDDR-II+ Burst of 2 SRAM
GS81302T110E 144Mb SigmaDDR-II+ Burst of 2 SRAM
GS81302T11E 144Mb SigmaDDR-II+ Burst of 2 SRAM
GS81302T11GE 144Mb SigmaDDR-II+ Burst of 2 SRAM
GS81302T19E 144Mb SigmaDDR-II+ Burst of 2 SRAM

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