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GS81302T38GE - 144Mb SigmaDDR-II+ Burst of 2 SRAM

This page provides the datasheet information for the GS81302T38GE, a member of the GS81302T06E-500 144Mb SigmaDDR-II+ Burst of 2 SRAM family.

Datasheet Summary

Description

Table Symbol Description Type Comments SA Synchronous Address Inputs Input R/W Synchronous Read/Write Input High: Read Low: Write BW0 BW3 Synchronous Byte Writes Input Active Low LD Synchronous Load Pin Input Active Low K Input Clock Input Active High K Input C

Features

  • 2.5 Clock Latency.
  • Simultaneous Read and Write SigmaDDRTM Interface.
  • JEDEC-standard pinout and package.
  • Double Data Rate interface.
  • Byte Write controls sampled at data-in time.
  • Burst of 2 Read and Write.
  • On-Die Termination (ODT) on Data (D), Byte Write (BW), and Clock (K, K) inputs.
  • 1.8 V +100/.
  • 100 mV core power supply.
  • 1.5 V or 1.8 V HSTL Interface.
  • Pipelined read operation.
  • Fully coheren.

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Datasheet preview – GS81302T38GE

Datasheet Details

Part number GS81302T38GE
Manufacturer GSI Technology
File Size 216.98 KB
Description 144Mb SigmaDDR-II+ Burst of 2 SRAM
Datasheet download datasheet GS81302T38GE Datasheet
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Full PDF Text Transcription

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GS81302T06/11/20/38E-500/450/400/350 165-Bump BGA Commercial Temp Industrial Temp 144Mb SigmaDDRTM-II+ Burst of 2 SRAM 500 MHz–350 MHz 1.8 V VDD 1.8 V or 1.5 V I/O Features • 2.5 Clock Latency • Simultaneous Read and Write SigmaDDRTM Interface • JEDEC-standard pinout and package • Double Data Rate interface • Byte Write controls sampled at data-in time • Burst of 2 Read and Write • On-Die Termination (ODT) on Data (D), Byte Write (BW), and Clock (K, K) inputs • 1.8 V +100/–100 mV core power supply • 1.5 V or 1.8 V HSTL Interface • Pipelined read operation • Fully coherent read and write pipelines • ZQ pin for programmable output drive strength • Data Valid Pin (QVLD) Support • IEEE 1149.
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