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GS8150V36AB-333 - 1M x 18/ 512K x 36 18Mb Register-Register Late Write SRAM

Download the GS8150V36AB-333 datasheet PDF. This datasheet also covers the GS8150V18AB-357 variant, as both devices belong to the same 1m x 18/ 512k x 36 18mb register-register late write sram family and are provided as variant models within a single manufacturer datasheet.

General Description

250 MHz

Because GS8150V18/36A are synchronous devices, address data inputs and read/write control inputs are captured on the rising edge of the input clock.

Write cycles are internally selftimed and initiated by the rising edge of the clock input.

Key Features

  • Register-Register Late Write mode, Pipelined Read mode.
  • 1.8 V +150/.
  • 100 mV core power supply.
  • 1.5 V or 1.8 V HSTL Interface.
  • ZQ controlled programmable output drivers.
  • Dual Cycle Deselect.
  • Fully coherent read and write pipelines.
  • Byte write operation (9-bit bytes).
  • Differential HSTL clock inputs, K and K.
  • Asynchronous output enable.
  • Sleep mode via ZZ.
  • IEEE 1149.1 JTAG-compliant Serial Boun.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (GS8150V18AB-357_GSITechnology.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number GS8150V36AB-333
Manufacturer GSI Technology
File Size 842.40 KB
Description 1M x 18/ 512K x 36 18Mb Register-Register Late Write SRAM
Datasheet download datasheet GS8150V36AB-333 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Product Preview GS8150V18/36AB-357/333/300/250 www.DataSheet4U.com 119-Bump BGA Commercial Temp Industrial Temp Features • Register-Register Late Write mode, Pipelined Read mode • 1.8 V +150/–100 mV core power supply • 1.5 V or 1.8 V HSTL Interface • ZQ controlled programmable output drivers • Dual Cycle Deselect • Fully coherent read and write pipelines • Byte write operation (9-bit bytes) • Differential HSTL clock inputs, K and K • Asynchronous output enable • Sleep mode via ZZ • IEEE 1149.1 JTAG-compliant Serial Boundary Scan • JEDEC-standard 119-bump BGA package • Pb-Free 119-bump BGA package available 1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM Functional Description 250 MHz–357 MHz 1.8 V VDD 1.5 V or 1.