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GS816218DD-xxxV

Manufacturer: GSI Technology

This datasheet includes multiple variants, all published together in a single manufacturer document.

GS816218DD-xxxV datasheet preview

Datasheet Details

Part number GS816218DD-xxxV
Datasheet GS816218DD-xxxV GS816218DB-xxxV Datasheet (PDF)
File Size 331.11 KB
Manufacturer GSI Technology
Description 18Mb S/DCD Sync Burst SRAMs
GS816218DD-xxxV page 2 GS816218DD-xxxV page 3

GS816218DD-xxxV Overview

Applications The GS816218/36D-xxxV is an 18,874,368-bit high performance synchronous SRAM with a 2-bit burst add.

GS816218DD-xxxV Key Features

  • FT pin for user-configurable flow through or pipeline operation
  • Single/Dual Cycle Deselect selectable
  • IEEE 1149.1 JTAG-patible Boundary Scan
  • ZQ mode pin for user-selectable high/low output drive
  • 1.8 V or 2.5 V core power supply
  • 1.8 V or 2.5 V I/O supply
  • LBO pin for Linear or Interleaved Burst mode
  • Internal input resistors on mode pins allow floating mode pins
  • Default to SCD x18/x36 Interleaved Pipeline mode
  • Byte Write (BW) and/or Global Write (GW) operation
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More Datasheets from GSI Technology

See all GSI Technology datasheets

Part Number Description
GS816218DD-150 18Mb S/DCD Sync Burst SRAMs
GS816218DD-200 18Mb S/DCD Sync Burst SRAMs
GS816218DD-250 18Mb S/DCD Sync Burst SRAMs
GS816218DD-333 18Mb S/DCD Sync Burst SRAMs
GS816218DD-375 18Mb S/DCD Sync Burst SRAMs
GS816218DD-400 18Mb S/DCD Sync Burst SRAMs
GS816218DB-150 18Mb S/DCD Sync Burst SRAMs
GS816218DB-200 18Mb S/DCD Sync Burst SRAMs
GS816218DB-250 18Mb S/DCD Sync Burst SRAMs
GS816218DB-333 18Mb S/DCD Sync Burst SRAMs

GS816218DD-xxxV Distributor

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