GS8162V36AB Datasheet | GSI Technology

Preliminary GS8162V18A(B/D)/GS8162V36A(B/D)/GS8162V72A(C) 119-, 165- & 209-Pin BGA mercial Temp Industrial Temp 1M x 18, 512K x 36, 256K x 72 18Mb S/DCD Sync Burst SRAMs 350 MHz- 150 MHz 1.8 V VDD 1.8 V I/O Features - FT pin for user-configurable flow through or pipeline operation - Single/Dual Cycle Deselect selectable - IEEE 1149.1 JTAG-patible Boundary Scan - ZQ mode pin for user-selectable high/low output drive - 1.8 V +10%/- 10% core power supply - LBO pin for Linear or Interleaved Burst mode - Internal input resistors on mode pins allow floating mode pins - Default to SCD x18/x36 Interleaved Pipeline mode - Byte Write (BW) and/or Global Write (GW) operation - Internal self-timed write cycle - Automatic power-down for portable applications - JEDEC-standard 119-, 165-, and 209-bump BGA package Functional Description Applications The GS8162V18A(B/D)/GS8162V36A(B/D)/GS8162V72A(C) is an 18,874,368-bit high performance synchronous SRAM with a 2-bit...