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GS8321E32E-V Datasheet 36mb Sync Burst Srams

Manufacturer: GSI Technology

Overview: GS8321E18/32/36E-xxxV 165-Bump FP-BGA mercial Temp Industrial Temp 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 250 MHz–133 MHz 1.8 V or 2.5 V VDD 1.8 V or 2.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

Applications The GS8321E18/32/36E-xxxV is a 37,748,736-bit high performance synchronous SRAM with a 2-bit burst address counter.

Although of a type originally developed for Leve

Key Features

  • FT pin for user-configurable flow through or pipeline operation.
  • Dual Cycle Deselect (DCD) operation.
  • IEEE 1149.1 JTAG-compatible Boundary Scan.
  • 1.8 V or 2.5 V core power supply.
  • 1.8 V or 2.5 V I/O supply.
  • LBO pin for Linear or Interleaved Burst mode.
  • Internal input resistors on mode pins allow floating mode pins.
  • Default to Interleaved Pipeline mode.
  • Byte Write (BW) and/or Global Write (GW) operation.
  • Int.

More Datasheets from GSI Technology

Part Number Description
GS8321E32E 36Mb Sync Burst SRAMs
GS8321E32GE 36Mb Sync Burst SRAMs
GS8321E32GE-V 36Mb Sync Burst SRAMs
GS8321E36E 36Mb Sync Burst SRAMs
GS8321E36E-V 36Mb Sync Burst SRAMs
GS8321E36GE 36Mb Sync Burst SRAMs
GS8321E36GE-V 36Mb Sync Burst SRAMs
GS8321E18E 36Mb Sync Burst SRAMs
GS8321E18E-V 36Mb Sync Burst SRAMs
GS8321E18GE 36Mb Sync Burst SRAMs

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