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GS8321EV32GE Datasheet 36mb Sync Burst Srams

Manufacturer: GSI Technology

Overview: GS8321EV18/32/36E-250/225/200/166/150/133 165-Bump FP-BGA mercial Temp Industrial Temp 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 250 MHz–133 MHz 1.8 V VDD 1.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

Applications The GS8321EV18/32/36E is a 37,748,736-bit high performance synchronous SRAM with a 2-bit burst address counter.

Although of a type originally developed for Level 2 Cache appli

Key Features

  • FT pin for user-configurable flow through or pipeline operation.
  • Dual Cycle Deselect (DCD) operation.
  • IEEE 1149.1 JTAG-compatible Boundary Scan.
  • 1.8 V +10%/.
  • 10% core power supply.
  • 1.8 V I/O supply.
  • LBO pin for Linear or Interleaved Burst mode.
  • Internal input resistors on mode pins allow floating mode pins.
  • Default to Interleaved Pipeline mode.
  • Byte Write (BW) and/or Global Write (GW) operation.
  • Int.

More Datasheets from GSI Technology

Part Number Description
GS8321EV32E 36Mb Sync Burst SRAMs
GS8321EV36E 36Mb Sync Burst SRAMs
GS8321EV36GE 36Mb Sync Burst SRAMs
GS8321EV18E 36Mb Sync Burst SRAMs
GS8321EV18GE 36Mb Sync Burst SRAMs
GS8321E18E 36Mb Sync Burst SRAMs
GS8321E18E-V 36Mb Sync Burst SRAMs
GS8321E18GE 36Mb Sync Burst SRAMs
GS8321E18GE-V 36Mb Sync Burst SRAMs
GS8321E32E 36Mb Sync Burst SRAMs

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