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GS8342T09E-250 Datasheet

36mb Sigmacio Ddr-ii Burst Sram

Manufacturer: GSI Technology

This datasheet includes multiple variants, all published together in a single manufacturer document.

GS8342T09E-250 Overview

Preliminary GS8342T08/09/18/36E-333/300/267 /250/200/167 165-Bump BGA mercial Temp Industrial Temp.

GS8342T09E-250 Key Features

  • Simultaneous Read and Write SigmaCIO™ Interface
  • mon I/O bus
  • JEDEC-standard pinout and package
  • Double Data Rate interface
  • Byte Write (x36 and x18) and Nybble Write (x8) function
  • Burst of 2 Read and Write
  • 1.8 V +100/-100 mV core power supply
  • 1.5 V or 1.8 V HSTL Interface
  • Pipelined read operation with self-timed Late Write
  • Fully coherent read and write pipelines

More Datasheets from GSI Technology

Part Number Description
GS8342T09E-250I 36Mb SigmaCIO DDR-II Burst SRAM
GS8342T09E-200 36Mb SigmaCIO DDR-II Burst SRAM
GS8342T09E-200I 36Mb SigmaCIO DDR-II Burst SRAM
GS8342T09E-167 36Mb SigmaCIO DDR-II Burst SRAM
GS8342T09E-167I 36Mb SigmaCIO DDR-II Burst SRAM
GS8342T09E-300 36Mb SigmaCIO DDR-II Burst SRAM
GS8342T09E-300I 36Mb SigmaCIO DDR-II Burst SRAM
GS8342T09E-333 36Mb SigmaCIO DDR-II Burst SRAM
GS8342T09E-333I 36Mb SigmaCIO DDR-II Burst SRAM
GS8342T09BD 36Mb SigmaDDR-II Burst of 2 SRAM

GS8342T09E-250 Distributor