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GS8342T36GE-250I - 36Mb SigmaCIO DDR-II Burst SRAM

This page provides the datasheet information for the GS8342T36GE-250I, a member of the GS8342T08E 36Mb SigmaCIO DDR-II Burst SRAM family.

Datasheet Summary

Description

Table Symbol SA NC R/W BW0 BW3 NW0 NW1 LD K K C C TMS TDI TCK TDO VREF ZQ DQ Doff CQ CQ VDD VDDQ VSS Note: NC = Not Connected to die or any other pin Description Synchronous Address Inputs No Connect Synchronous Read/Write Synchronous Byte Writes Nybble Write Control Pin Synchronous

Features

  • Simultaneous Read and Write SigmaCIO™ Interface.
  • Common I/O bus.
  • JEDEC-standard pinout and package.
  • Double Data Rate interface.
  • Byte Write (x36 and x18) and Nybble Write (x8) function.
  • Burst of 2 Read and Write.
  • 1.8 V +100/.
  • 100 mV core power supply.
  • 1.5 V or 1.8 V HSTL Interface.
  • Pipelined read operation with self-timed Late Write.
  • Fully coherent read and write pipelines.
  • ZQ pin for progra.

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Datasheet preview – GS8342T36GE-250I

Datasheet Details

Part number GS8342T36GE-250I
Manufacturer GSI Technology
File Size 2.33 MB
Description 36Mb SigmaCIO DDR-II Burst SRAM
Datasheet download datasheet GS8342T36GE-250I Datasheet
Additional preview pages of the GS8342T36GE-250I datasheet.

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Full PDF Text Transcription

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Preliminary GS8342T08/09/18/36E-333/300/267*/250/200/167 165-Bump BGA Commercial Temp Industrial Temp Features • Simultaneous Read and Write SigmaCIO™ Interface • Common I/O bus • JEDEC-standard pinout and package • Double Data Rate interface • Byte Write (x36 and x18) and Nybble Write (x8) function • Burst of 2 Read and Write • 1.8 V +100/–100 mV core power supply • 1.5 V or 1.8 V HSTL Interface • Pipelined read operation with self-timed Late Write • Fully coherent read and write pipelines • ZQ pin for programmable output drive strength • IEEE 1149.
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