GTM CORPORATION GI1202
The GI1202 is designed for voltage regulators, relay drivers, lamp drivers and electrical equipment applications.DESCRIPTION
FEATURES
PNP EPITAXIAL PLANAR SILICON TRANSISTOR *Large current capacitance and wide ASO *Low collector-to-emitter saturation voltage *Fast switching speed Package Dimensions TO-251 REF. A B C D E F Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90 REF. G H J K L M Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50 5.40 5.80ABSOLUTE MAXIMUM RATINGS
(Ta = 25 Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Collector Current(Pulse) Junction Temperature Storage Temperature Total Power Dissipation ,unless otherwise specified) Symbol Ratings VCBO -60 VCEO -50 VEBO -6 IC -3 ICP -6 Tj +150 TsTG -55 ~ +150 PD 1 15 PD(TC=25 ) ) Unit Test Conditions Unit V V V A A W WELECTRICAL CHARACTERISTICS
(Rating at Ta=25 Symbol Min. Typ. Max. BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat)1 *VBE(sat) *hFE1 *hFE2 fT Cob ton (Turn-On Time) tstg (Storage Time) tf (Fall Time) -60 -50 -6 100 35 - -0.