DESCRIPTION
FEATURES
PNP EPITAXIAL TRANSISTOR ISSUED DATE :2005/05/06 REVISED DATE : *High Collector current (IC: 1.5A) *Complementary to GI8050 Package Dimensions TO-251 REF. A B C D E F Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90 REF. G H J K L M Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50 5.40 5.80 ABSOLUTE MAXIMUM RATINGS
(Ta = 25 Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collect Current Base Current Junction Temperature Storage Temperature Range Total Power Dissipation ,unless otherwise specified) Symbol Ratings VCBO -40 VCEO -25 VEBO -6 IC -1.5 IB -0.5 Tj +150 TsTG -55 ~ +150 PD 1.25 Unit V V V A A W ELECTRICAL CHARACTERISTICS
(Ta = 25 Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *VBE(on) *hFE1 *hFE2 *hFE3 fT Cob Min. -40 -25 -6 45 120 40 100 Typ. 9 ,unless otherwise specified) Max. Unit V V V -100 nA -100 nA -0.5 V -1.2 V -1 V 500 MHz pF Test Conditions IC=-100...
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