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GL5401 - PNP EPITAXIAL PLANAR TRANSISTOR

General Description

The GL5401 is designer for general purpose applications requiring high breakdown voltages.

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Datasheet Details

Part number GL5401
Manufacturer GTM CORPORATION
File Size 161.76 KB
Description PNP EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet GL5401 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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1/2 GL5401 PNP EPITAXIAL PLANAR TRANSISTOR Description The GL5401 is designer for general purpose applications requiring high breakdown voltages. Package Dimensions Absolute Maximum Ratings at Ta = 25к Parameter Symbol Junction Temperature Tj Storage Temperature Tstg Collector to Base Voltage VCBO Collector to Emitter Voltage VCEO Emitter to Base Voltage VEBO Collector Current IC Total Power Dissipation PD REF. A C D E I H Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 0̓ 10̓ 0.60 0.80 0.25 0.35 REF. B J 1 2 3 4 5 Millimeter Min. Max. 13̓TYP. 2.30 REF. 6.30 6.70 6.30 6.70 3.30 3.70 3.30 3.70 1.40 1.80 Ratings Unit +150 ć -55 ~ +150 ć -160 V -150 V -5 V -600 mA 1.