GM8050 Datasheet | GTM CORPORATION

Description Package Dimensions 1/2 N P N E P I TA X I A L T R A N S I S T O R The GM8050 is designed for general purpose amplifier applications. .. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 G H I J K L M Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5 TYP. 0.70 REF. Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current IB Base Current Total Power Dissipation Symbol Tj Tstg VCBO VCEO VEBO IC IB PD Ratings +150 -55 ~ +150 40 25 6 1.5 0.5 1 V V V A A W Unit Characteristics Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) VBE(sat) VBE(on) Hfe1 Hfe2 Hfe3 f T at Ta = 25 Min. 40 25 6 45 120 40 100 Typ. Max. 100 100 0.5 1.2 1 500 MHz Unit V V V n A n A V V V IC=100u A IC=2m A IE=100u A VCB=35V VEB=6V IC=0.8A, IB=80m A IC=0.8A, IB=80m A VCE=1V, IC=10m A VCE=1V, IC=5m A VCE=1V, IC=100m A VCE=1V, IC=800m A VCE=10V, IC=50m A Test Conditions Classification Of h FE Rank h FE C 120-200 D 160 - 300 E 250 - 500 2/2 Characteristics Curve .. Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX :...