• Part: GP5936
  • Description: P-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • Category: MOSFET
  • Manufacturer: GTM CORPORATION
  • Size: 285.92 KB
Download GP5936 Datasheet PDF
GTM CORPORATION
GP5936
GP5936 is P-CHANNEL ENHANCEMENT MODE POWER MOSFET manufactured by GTM CORPORATION.
Description Features Package Dimensions GAUGE PLANE REF. A A1 A2 b b1 b2 b3 c Millimeter Min. Max. 0.381 2.921 0.356 0.356 1.143 0.762 0.203 0.5334 4.953 0.559 0.508 1.778 1.143 0.356 REF. c1 D E E1 e HE L Millimeter Min. Max. 0.203 0.279 9.017 10.16 6.096 7.112 7.620 8.255 2.540 BSC 10.92 2.921 3.810 SEATING PLANE Z Z b SECTION Z - Z b e DIP-8 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 c Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Ratings -40 ±25 -5.5 -4.5 -30 2 0.016 -55 ~ +150 Unit V V A A A W W/ Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Data Parameter Thermal Resistance Junction-ambient Symbol Max. Rthj-a Value 62.5 Unit /W Page: 1/4 ISSUED DATE :2005/11/14 REVISED DATE : Electrical Characteristics (Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient unless otherwise specified) Min. -40 -1.0 Typ. -0.03 10 19 5 8 12 7 68 38 1600 240 190 Max. -3.0 ±100 -1 -25 40 60 30 2560 p F ns n C Unit V V/ V S n A u A u A m Test Conditions VGS=0, ID=-250u A Reference to 25 , ID=-1m A VDS=VGS, ID=-250u A VDS=-10V, ID=-5.5A VGS= ±25V VDS=-40V, VGS=0 VDS=-32V, VGS=0 VGS=-10V, ID=-5.5A VGS=-4.5V, ID=-4A ID=-6A VDS=-32V VGS=-4.5V VDS=-20V ID=-1A VGS=-10V RG=3.3 RD=20 VGS=0V VDS=-25V f=1.0MHz Symbol BVDSS BVDSS /...