GP5936
GP5936 is P-CHANNEL ENHANCEMENT MODE POWER MOSFET manufactured by GTM CORPORATION.
Description
Features
Package Dimensions
GAUGE PLANE
REF. A A1 A2 b b1 b2 b3 c
Millimeter Min. Max.
0.381 2.921 0.356 0.356 1.143 0.762 0.203 0.5334 4.953 0.559 0.508 1.778 1.143 0.356
REF. c1 D E E1 e HE L
Millimeter Min. Max.
0.203 0.279 9.017 10.16 6.096 7.112 7.620 8.255 2.540 BSC 10.92 2.921 3.810
SEATING PLANE Z Z b
SECTION Z
- Z b e
DIP-8
Absolute Maximum Ratings
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3 3 c
Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg
Ratings -40 ±25 -5.5 -4.5 -30 2 0.016 -55 ~ +150
Unit V V A A A W W/
Total Power Dissipation Linear Derating Factor
Operating Junction and Storage Temperature Range
Thermal Data
Parameter Thermal Resistance Junction-ambient
Symbol Max. Rthj-a
Value 62.5
Unit /W
Page: 1/4
ISSUED DATE :2005/11/14 REVISED DATE :
Electrical Characteristics (Tj = 25
Parameter Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient unless otherwise specified)
Min. -40 -1.0 Typ. -0.03 10 19 5 8 12 7 68 38 1600 240 190 Max. -3.0 ±100 -1 -25 40 60 30 2560 p F ns n C Unit V V/ V S n A u A u A m Test Conditions VGS=0, ID=-250u A Reference to 25 , ID=-1m A VDS=VGS, ID=-250u A VDS=-10V, ID=-5.5A VGS= ±25V VDS=-40V, VGS=0 VDS=-32V, VGS=0 VGS=-10V, ID=-5.5A VGS=-4.5V, ID=-4A ID=-6A VDS=-32V VGS=-4.5V VDS=-20V ID=-1A VGS=-10V RG=3.3 RD=20 VGS=0V VDS=-25V f=1.0MHz
Symbol BVDSS
BVDSS /...