GTM CORPORATION GP5936
The GP5936 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.| Part No. | GP5936 |
|---|---|
| Datasheet | GP5936 Download |
| Manufacturer |  GTM CORPORATION |
| Description | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
FEATURES
Package Dimensions D GAUGE PLANE E REF. A A1 A2 b b1 b2 b3 c A Millimeter Min. Max. 0.381 2.921 0.356 0.356 1.143 0.762 0.203 0.5334 4.953 0.559 0.508 1.778 1.143 0.356 REF. c1 D E E1 e HE L Millimeter Min. Max. 0.203 0.279 9.017 10.16 6.096 7.112 7.620 8.255 2.540 BSC 10.92 2.921 3.810 SEATING PLANE Z Z b L SECTION Z - Z b e DIP-8ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 c Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Ratings -40 ±25 -5.5 -4.5 -30 2 0.016 -55 ~ +150 Unit V V A A A W W/ Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Data Parameter Thermal Resistance Junction-ambient 3 Symbol Max. Rthj-a Value 62.5 Unit /W GP5936 Page: 1/4 ISSUED DATE :2005/11/14 REVISED DATE :ELECTRICAL CHARACTERISTICS
(Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coeff...
