Datasheet Summary
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Pb Free Plating Product
ISSUED DATE :2005/04/27 REVISED DATE :2005/07/14B
G 111 K
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
55V 2 640mA
The G111K utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The G111K is universally used for all mercial-industrial applications.
Description
Features
- Simple Drive Requirement
- Small Package Outline
- RoHS pliant
Package Dimensions
REF. A B C D E F
Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55
REF. G H K J L M
Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0...
