DESCRIPTION
FEATURES
P NP EP ITAXI AL PL ANAR T RANSI STOR Excellent hFE(2)=25(Min.) @ VCE=-6V, IC=-400mA Package Dimensions D E S1 TO-92 A S E A T IN G PLANE b1 L REF. A S1 b b1 C e1 e b C Millimeter Min. Max. 4.45 4.7 1.02 0.36 0.51 0.36 0.76 0.36 0.51 REF. D E L e1 e Millimeter Min. Max. 4.44 4.7 3.30 3.81 12.70 1.150 1.390 2.42 2.66 ABSOLUTE MAXIMUM RATINGS
(TA=25 ) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Total Device Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ Tstg Ratings -35 -30 -5 -500 625 150 -55 ~ +150 Unit V V V mA mW ELECTRICAL CHARACTERISTICS
(TA = 25 Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(on) *hFE1 *hFE2 fT Cob Min. -35 -30 -5 70 25 100 Typ. - unless otherwise noted) Max. -100 -100 -0.25 -1.0 240 8 MHz pF Unit V V V nA nA V V IC=-100uA, IE=0 IC=-1mA, IB=0 IE=-100uA, IC=0 VCB=-35V, IE=0 VEB=-5V, IC=0 IC=-100mA, IB=-10mA VCE=-1V, IC=-100mA VCE=-1V, IC=-...
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