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G1332E Datasheet PDF

GTM G1332E

The G1332E provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness.
Part No. G1332E
Datasheet G1332E Download
Manufacturer
GTM
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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G1332E datasheet page 1 preview

DESCRIPTION

*Simple Gate Drive *Small Package Outline *2KV ESD Rating (Per MIL-STD-883D)

FEATURES

Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0° 10°

ABSOLUTE MAXIMUM RATINGS

Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 3 Continuous Drain Current 1,2 Pulsed Drain Current Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Symbol Rthj-a Ratings 20 ±5 600 470 2.5 1.0 0.008 -55 ~ +150 Value 125 Unit V V mA mA A W W/ Thermal Data Parameter Thermal Resistance Junction-ambient3 Max. Unit /W G1332E Page: 1/4 ISSUED DATE :2005/03/10 REVISED DATE :2006/11/24C

ELECTRICAL CHARACTERISTICS

(Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient unless otherwise specified) Min. 20 0.5 Typ.
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