G1332E - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Product Overview

GTM

G1332E N-CHANNEL ENHANCEMENT MODE POWER MOSFET by GTM - Datasheet Preview — Datasheet preview – G1332E

Datasheet Details

Part number	G1332E
Manufacturer	GTM
File Size	289.21 KB
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet	G1332E Datasheet
Additional preview pages of the G1332E datasheet.

Product details

Description

The G1332E provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness. Simple Gate Drive Small Package Outline 2KV ESD Rating (Per MIL-STD-883D)

Features

Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0° 10° Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 3 Continuous Drain Current 1,2 Pulsed Drain Current Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25 ID @TA=70 IDM.

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Published: Sep 17, 2007 |