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G2N7002
Description Package Dimensions
1/3 N-CHANNEL TRANSISTOR
N-channel enhancement-mode MOS TRANSISTOR
REF. A B C D E F
Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55
REF. G H K J L M
Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0 10
Absolute Maximum Ratings at Ta = 25
Parameter Operating Junction and Storage Temperature Range Drain-Source Voltage Gate-Source Voltage Continuous Non-repetitive (tp 50us) Continuous Drain Current Pulsed Drain Current (Ta=25 Power Dissipation ) Ta=25 Ta=100 (2) Ta=25 Ta=100 Symbol Tj, Tstg Ratings -55 ~ +150 60 V V V mA mA W /W 20 40 115 73 800 0.2 0.