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G2SD655 - Silicon NPN Epitaxial

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Part number G2SD655
Manufacturer GTM
File Size 661.14 KB
Description Silicon NPN Epitaxial
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    www.DataSheet4U.com CORPORATION G2SD655 Silico n NPN Epi ta xi al Application Low frequency power amplifier, Muting. Package Dimensions D E S1 ISSUED DATE :2004/05/24 REVISED DATE :2004/11/29B TO-92 A b1 S E A T IN G PLANE L REF. A S1 b b1 C e1 e b C Millimeter Min. Max. 4.45 4.7 1.02 0.36 0.51 0.36 0.76 0.36 0.51 REF. D E L e1 e Millimeter Min. Max. 4.44 4.7 3.30 3.81 12.70 1.150 1.390 2.42 2.66 Absolute Maximum Ratings (Ta = 25 Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collect Current(DC) Collect peak current Junction Temperature Storage Temperature Range Total Power Dissipation ) Ratings VCBO VCEO VEBO IC IC(peak) Tj Tstg PD 30 15 5 0.7 1.0 +150 -55 ~ +150 500 mW Unit V V V A A Electrical Characteristics(Ta = 25 Symbol Min.
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