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G2U09N70 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Features

  • Package Dimensions REF. A b c D E Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 REF. c2 b2 L e L2 Millimeter Min. Max. 1.25 1.45 1.17 1.47 13.25 14.25 2.54 REF. 1.27 REF. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS@10V Continuous Drain Current , VGS@10V Pulsed Drain Current 1 Symbol - /A/H VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25 2 Ratings 600/650/700 20 9 5 40 156 1.25 305 9 9 -55 ~ +150 Unit V V.

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Datasheet Details

Part number G2U09N70
Manufacturer GTM
File Size 336.72 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet G2U09N70 Datasheet
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www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/04/21 REVISED DATE : G2U09N70 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 600/650/700V RDS(ON) 0.75 ID 9A The G2U09N70 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications. TO-262 type provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast switching, ruggedized design and cost-effectiveness. The TO-262 package is universally preferred for all commercial-industrial applications. The device is suited for switch mode power supplies, DC-AC converters and high current high speed switching circuits.
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