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G3314 - P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Datasheet Summary

Features

  • Low On-resistance.
  • Ultrahigh-speed switching.
  • 4V drive Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0 10 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 3 Continuous Drain Current Pulsed Drain Current1,2 Power Dissipation Linear Derating Factor Symbol VDS VGS ID @TA=25 ID.

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Datasheet preview – G3314

Datasheet Details

Part number G3314
Manufacturer GTM
File Size 410.99 KB
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet G3314 Datasheet
Additional preview pages of the G3314 datasheet.

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    www.DataSheet4U.com CORPORATION G3314 P-CHANNEL ENHANCEMENT MODE POWER MOSFET Pb Free Plating Product ISSUED DATE :2005/03/04 REVISED DATE : BVDSS RDS(ON) ID -30V 240m -1.9A The G3314 provides the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. Description Features *Low On-resistance *Ultrahigh-speed switching *4V drive Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.
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