Datasheet Details
| Part number | G3J14 |
|---|---|
| Manufacturer | GTM |
| File Size | 403.66 KB |
| Description | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet |
 G3J14 Datasheet
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General Description
The G3J14 provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness.
The G3J14 is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
Low On-resistanceKey Features
- Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0 10 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 1,2 Pulsed Drain Current Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25.