G6718 Datasheet | GTM

Description Features NP N EP ITAXI AL PL ANAR T RANSI STOR The G6718 is designed for general purpose medium power amplifier and switching applications. High Power: 850m W High Current: 1A Package Dimensions D E S1 TO-92 S E A T IN G PLANE b1 REF. A S1 b b1 C e1 e b Millimeter Min. Max. 4.45 4.7 1.02 0.36 0.51 0.36 0.76 0.36 0.51 REF. D E L e1 e Millimeter Min. Max. 4.44 4.7 3.30 3.81 12.70 1.150 1.390 2.42 2.66 Absolute Maximum Ratings (TA=25 ) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Total Device Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC IC IB PD TJ Tstg Ratings 100 100 5 1 2 200 850 150 -55 ~ +150 Unit V V V A A m A m W Electrical Characteristics (TA = 25 Symbol BVCBO BVCEO BVEBO ICBO - VCE(sat) - h FE1 - h FE2 - h FE3 f T Cob Min. 100 100 5 80 50 20 50 Typ. - unless otherwise noted) Max. 100 350 300 20 MHz p F Unit V V V n A m V IC=100u A, IE=0 IC=1m A, IB=0 IE=10u A, IC=0 VCB=80V, IE=0 IC=350m A, IB=35m A VCE=1V, IC=50m A VCE=1V, IC=250m A VCE=1V, IC=500m A VCE=10V, IE=50m A, f=100MHz VCB=10V, IE=0, f=1MHz - Pulse Test: Pulse Width 380 s, Duty Cycle 2% Test Conditions Classification Of h FE2 Rank Range A 50 ~ 115 B 95 ~ 300 1/2 ISSUED DATE :2005/09/05 REVISED DATE : Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255,...