DESCRIPTION
FEATURES
NP N EP ITAXI AL PL ANAR T RANSI STOR High Power: 850mW High Current: 1A Package Dimensions D E S1 TO-92 A S E A T IN G PLANE b1 L REF. A S1 b b1 C e1 e b C Millimeter Min. Max. 4.45 4.7 1.02 0.36 0.51 0.36 0.76 0.36 0.51 REF. D E L e1 e Millimeter Min. Max. 4.44 4.7 3.30 3.81 12.70 1.150 1.390 2.42 2.66 ABSOLUTE MAXIMUM RATINGS
(TA=25 ) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Total Device Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC IC IB PD TJ Tstg Ratings 100 100 5 1 2 200 850 150 -55 ~ +150 Unit V V V A A mA mW ELECTRICAL CHARACTERISTICS
(TA = 25 Symbol BVCBO BVCEO BVEBO ICBO *VCE(sat) *hFE1 *hFE2 *hFE3 fT Cob Min. 100 100 5 80 50 20 50 Typ. - unless otherwise noted) Max. 100 350 300 20 MHz pF Unit V V V nA mV IC=100uA, IE=0 IC=1mA, IB=0 IE=10uA, IC=0 VCB=80V, IE=0 IC=350mA, IB=35mA VCE=1V, IC=50mA VCE=1V, IC=250mA VCE=...
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