DESCRIPTION
FEATURES
N P N E P I TA X I A L T R A N S I S T O R LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR *Collector current up to 700mA *Collector –Emitter voltage up to 20V *Complementary to G8551S Package Dimensions D E S1 TO-92 A b1 S E A T IN G PLANE REF. L e1 e b C A S1 b b1 C Millimeter Min. Max. 4.45 4.7 1.02 0.36 0.51 0.36 0.76 0.36 0.51 REF. D E L e1 e Millimeter Min. Max. 4.44 4.7 3.30 3.81 12.70 1.150 1.390 2.42 2.66 ABSOLUTE MAXIMUM RATINGS
(Ta = 25 Parameter ,unless otherwise specified) Ratings Unit Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collect Current(DC) Junction Temperature Storage Temperature Range Total Power Dissipation VCBO VCEO VEBO IC Tj TsTG PD Typ. 100 10 ,unless otherwise specified) Max. Unit V V V 1 uA 100 nA 400 0.5 1 V V MHz pF 25 20 5 0.7 +150 -55 ~ +150 625 Test Conditions IC=10uA,IE=0 IC=1mA,IB=0 IE=10uA,IC=0 VCB=20V, IE=0 VBE=6V,Ic=0 VCE=1V,IC=150mA VCE=1V,IC=150mA lC=500mA,IB=50mA VCE=1V,Ic=150mA VCE=...
GTM
