DESCRIPTION
FEATURES
PNP EPITAXIAL PLANAR TANSISTOR ISSUED DATE :2004/04/23 REVISED DATE :2004/11/29B * High DC Current gain: 100-500 at IC= 150mA *Complementary to G8050S Package Dimensions D E S1 TO-92 A b1 S E A T IN G PLANE L REF. A S1 b b1 C e1 e b C Millimeter Min. Max. 4.45 4.7 1.02 0.36 0.51 0.36 0.76 0.36 0.51 REF. D E L e1 e Millimeter Min. Max. 4.44 4.7 3.30 3.81 12.70 1.150 1.390 2.42 2.66 ABSOLUTE MAXIMUM RATINGS
at Ta = 25 Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Symbol Tj Tstg VCBO VCEO VEBO Ratings +150 -55 ~ +150 -25 -20 -5 -700 625 Unit V V V mA mW IC PD Characteristics Symbol BVCBO BVCEO BVEBO ICEX *VCE(sat) *VBE(on) *hFE1 *hFE2 fT Cob at Ta = 25 Min. -25 -20 -5 100 150 Typ. 100 Max. -1 -0.5 -1 500 10 MHz pF Unit V V V uA V V IC=-10uA, IE=0 IC=-1mA, IB=0 IE=-10uA, , IC =0 VCE=-20V, IE=0 IC=-0.5A, IB=-50mA VCE=-1V, IC=-150mA VCE=-1V, IC=-1...
GTM
