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GBAS16 Datasheet PDF

GTM GBAS16

The GBAS16 is designed for high-speed switching application in hybrid thick and thin-film circuits. The devices is manufactured by the silicon epitaxial planar process and packed in a plastic surface mount package.
Part No. GBAS16
Datasheet GBAS16 Download
Manufacturer
GTM
Description SWITCHING DIODE
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GBAS16 datasheet page 1 preview

DESCRIPTION

V O LT A G E 8 5 V, C U R R E N T 2 5 0 m A ISSUED DATE :2002/10/28 REVISED DATE :2006/06/06C S U R F A C E M O U N T, S W I T C H I N G D I O D E Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0° 10°

ABSOLUTE MAXIMUM RATINGS

at TA = 25 Parameter Junction Temperature Storage Temperature Reverse Voltage Repetitive Reverse Voltage Forward Current Repetitive Forward Current Forward Surge Current (1ms) Total Power Dissipation(Note1) Note 1.Device mounted on FR-4=1.6*1.6*0.06in Symbol Tj Tstg VR VRRM IO IFM IFSM PD Ratings +150 -65 ~ +150 85 85 250 500 1000 350 V V mA mA mA mW Unit

ELECTRICAL CHARACTERISTICS

(at TA = 25 Characteristic Reverse Breakdown Voltage Symbol V(BR) VF(1) Forward Voltage VF(2) VF(3) VF(4) Reverse Current Total Capacitance Reverse Recovery Time IR CT Trr Min. 85 - unless otherwise noted) Max. 715 855 1000 125...
GBAS16 page 2 preview