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CORPORATION
G B AS16
Description
V O LT A G E 8 5 V, C U R R E N T 2 5 0 m A
ISSUED DATE :2002/10/28 REVISED DATE :2006/06/06C
S U R F A C E M O U N T, S W I T C H I N G D I O D E
The GBAS16 is designed for high-speed switching application in hybrid thick and thin-film circuits. The devices is manufactured by the silicon epitaxial planar process and packed in a plastic surface mount package.
Package Dimensions
REF. A B C D E F
Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55
REF. G H K J L M
Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.
GBAS16 Datasheet
