GBAS16
Description
V O LT A G E 8 5 V, C U R R E N T 2 5 0 m A ISSUED DATE :2002/10/28 REVISED DATE :2006/06/06C S U R F A C E M O U N T, S W I T C H I N G I O E The GBAS16 is designed for high-speed switching application in hybrid thick and thin-film circuits. The devices is manufactured by the silicon epitaxial planar process and packed in a plastic surface mount package.
