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GBAV70 Datasheet PDF

GTM GBAV70

The GBAV70 consists of two diodes in a plastic surface mount package. The diodes are connected in series and the unit is designed for high-speed switching application in hybrid thick and thin-film circuits.
Part No. GBAV70
Datasheet GBAV70 Download
Manufacturer
GTM
Description consists of two diodes
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GBAV70 datasheet page 1 preview

DESCRIPTION

1/3 Package Dimensions Style : Pin1.Anode 2. Anode 3. Cathode REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF . G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0 10

ABSOLUTE MAXIMUM RATINGS

at Ta = 25 Parameter Junction Temperature Storage Temperature Reverse Voltage Forward Current Repetitive Forward Current Total Power Dissipation Symbol Tj Tstg Ratings +150 -65~+150 80 200 500 225 Unit PD V mA mA mW Characteristics Characteristic at Ta = 25 Symbol V(BR) VF(1) VF(2) VF(3) VF(4) IR CT Trr Min. 80 Max. 715 855 1100 1300 5 1.5 15 Unit V mV mV mV mV uA pF nS IR=100uA IF=1mA IF=10mA IF=50mA IF=100mA VR=80V VR=0, f=1MHz IF=IR=10mA, RL=100 IR=1Ma,VR=5V measured at Test Conditions Reverse Breakdown Voltage Forward Voltage Reverse Current Total Capacitance Reverse Recovery Time 2/3 Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
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