DESCRIPTION
FEATURES
NPN SILICON TRANSISTOR High DC Current Gain: 100~630 @VCE=1V, IC=100mA Complementary to GBC327 D Package Dimensions E S1 TO-92 A S E A T IN G PLANE b1 L REF. A S1 b b1 C e1 e b C Millimeter Min. Max. 4.45 4.7 1.02 0.36 0.51 0.36 0.76 0.36 0.51 REF. D E L e1 e Millimeter Min. Max. 4.44 4.7 3.30 3.81 12.70 1.150 1.390 2.42 2.66 ABSOLUTE MAXIMUM RATINGS
(TA=25 ) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (continuous) Total Device Dissipation @ TA =25 Derate above 25 Total Device Dissipation @ TC =25 Derate above 25 Operating and Storage Junction Temperature Symbol VCBO VCEO VEBO IC PD PD TJ, Tstg R JA R JC Ratings 50 45 5 800 625 5.0 1.5 12 -55 ~ +150 200 83.3 Unit V V V mA mW mW/ W mW/ /W /W Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case ELECTRICAL CHARACTERISTICS
(TA = 25 Symbol BVCBO BVCEO BVCES BVEBO ICBO ICES IEBO *VCE(sat) *VBE(on) *hFE1 *hFE2 fT Cob Min. 50 45 50 5 100 60 Typ.
GTM
