DESCRIPTION
FEATURES
PNP SILICON TRANSISTOR High DC Current Gain: 120~800 @VCE=-5V, IC=-2mA Complementary to GBC547 D Package Dimensions E S1 TO-92 A S E A T IN G PLANE b1 L REF. A S1 b b1 C e1 e b C Millimeter Min. Max. 4.45 4.7 1.02 0.36 0.51 0.36 0.76 0.36 0.51 REF. D E L e1 e Millimeter Min. Max. 4.44 4.7 3.30 3.81 12.70 1.150 1.390 2.42 2.66 ABSOLUTE MAXIMUM RATINGS
(TA=25 ) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (continuous) Total Device Dissipation @ TA =25 Derate above 25 Total Device Dissipation @ TC =25 Derate above 25 Operating and Storage Junction Temperature Symbol VCBO VCEO VEBO IC PD PD TJ, Tstg R JA R JC Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Ratings -50 -45 -5 -100 625 5.0 1.5 12 -55 ~ +150 200 83.3 Unit V V V mA mW mW/ W mW/ /W /W ELECTRICAL CHARACTERISTICS
(TA = 25 Symbol BVCBO BVCEO BVEBO ICES *VCE(sat)1 *VCE(sat)2 *VBE(sat)1 *VBE(sat)2 *VBE(on)1 *VBE(on)2 *hFE...
GTM
