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GBC807 Datasheet PDF

GTM GBC807

The GBC807 is designed for switching and AF amplifier application, suitable for driver storages and low power output storages.
Part No. GBC807
Datasheet GBC807 Download
Manufacturer
GTM
Description PNP EPITAXIAL TRANSISTOR
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GBC807 datasheet page 1 preview

DESCRIPTION

Package Dimensions 1/2 P NP E PITAX I AL P L ANAR T RANS ISTO R REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0 10

ABSOLUTE MAXIMUM RATINGS

at Ta = 25 Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Symbol Tj Tstg VCBO VCEO VEBO IC PD Ratings +150 -55 ~ +150 -50 -45 -5 -800 225 V V V mA mW Unit Characteristics Symbol BVEBO BVCEO BVCES ICES IEBO *VCE(sat) VBE(on) hFE fT Cob at Ta = 25 Min. -5 -45 -50 100 Typ. 100 Max. -100 -100 -700 -1.2 630 12 MHz pF Unit V V V nA nA mV V IE=-100uA IC=-10mA IC=-100uA VCE=-25V VEB=-4V IC=-500mA, IB=-50mA VCE=-1V, IC=-300mA VCE=-1V, IC=-100mA VCE=-5V, IC=-10mA, f=100MHz VCB=-10V, f=1MHz, IE=0A Test Conditions 2/2 Classification Of hFE Rank hFE A 100-250 B 160-400 C 250-630 Characteristics Curve Important Notice: All rights are reserved.
GBC807 page 2 preview