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GBC817 Datasheet PDF

GTM GBC817

The GBC817 is designed for switching and AF amplifier application, suitable for driver storages and low power output storages.
Part No. GBC817
Datasheet GBC817 Download
Manufacturer
GTM
Description NPN SILICON TRANSISTOR
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GBC817 datasheet page 1 preview

DESCRIPTION

Package Dimensions TPU.34)QBDLBHF* REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 - 0.85 1.15 0̓ 10̓

ABSOLUTE MAXIMUM RATINGS

at Ta = 25к Parameter Symbol Ratings Unit Junction Temperature Tj +150 ć Storage Temperature Tstg -55 ~ +150 ć Collector to Base Voltage VCBO 50 V Collector to Emitter Voltage VCEO 45 V Emitter to Base Voltage VEBO 5 V Collector Current IC 800 mA Total Power Dissipation PD 225 mW Characteristics at Symbol BVEBO Min. 5 BVCEO 45 BVCES 50 ICES - IEBO - *VCE(sat) - VBE(on) - hFE 100 fT - Cob - Ta = 25к Typ. - 100 - Max. - 100 100 700 1.2 630 12 Unit V V V nA nA mV V MHz pF Test Conditions IE=-100uA IC=10mA IC=100uA VCE=25V VEB=4V IC=500mA, IB=50mA VCE=1V, IC=300mA VCE=1V, IC=100mA VCE=5V, IC=10mA, f=100MHz VCB=10V, f=1MHz, IE=0A 2/2 Classification Of hFE Rank hFE A 100-250 B 160-400 C 250-630 Characteristics Curve Important Notice: All rights are reserved.
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