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GBC848 Datasheet PDF

GTM GBC848

The GBC848 is designed for switching and AF amplifier application, suitable for automatic insertion in thick and thin-film circuits.
Part No. GBC848
Datasheet GBC848 Download
Manufacturer
GTM
Description NPN SILICON TRANSISTOR
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GBC848 datasheet page 1 preview

DESCRIPTION

Package Dimensions 1/2 NP N E PITAX I AL P L ANAR T RANS ISTO R REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0 10

ABSOLUTE MAXIMUM RATINGS

at Ta = 25 Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Symbol Tj Tstg VCBO VCEO VEBO IC PD Ratings +150 -55 ~ +150 30 30 5 100 225 V V V mA mW Unit Characteristics Symbol BVCBO BVCEO BVEBO ICBO VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 VBE(on)1 VBE(on)2 hFE fT Cob at Ta = 25 Min. 30 30 5 580 110 Typ. 90 200 700 900 300 3.5 Max. 15 250 600 700 770 800 6 MHz pF Unit V V V nA mV mV mV mV mV mV IC=100uA IC=1mA IE=10uA VCB=30V IC=10mA, IB=0.5mA IC=100mA, IB=5mA IC=10mA, IB=0.5mA IC=100mA, IB=5mA VCE=5V, IC=2mA VCE=5V, IC=10mA VCE=5V, IC=2mA VCE=5V, IC=10mA VCB=10V, f=1MHz, IE=0A Test Conditions 2/2 Classification Of hFE Rank hFE A 110-220 B 200-450 C 420-800 Characteristics Curve Important Notice: All rights are reserved.
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