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GC01L60 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Key Features

  • Package Dimensions D E S1 TO-92 A S E A T IN G PLANE b1 REF. L e1 e b C A S1 b b1 C Millimeter Min. Max. 4.45 4.7 1.02 0.36 0.51 0.36 0.76 0.36 0.51 REF. D E L e1 e Millimeter Min. Max. 4.44 4.7 3.30 3.81 12.70 1.150 1.390 2.42 2.66 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current 1 Symbol VDS VGS ID @TA=25 ID @TA=100 IDM PD @TC=25 2 Ratings 600 30 160 100 300 0.83.

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Datasheet Details

Part number GC01L60
Manufacturer GTM
File Size 298.13 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet GC01L60 Datasheet

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Full PDF Text Transcription (Reference)

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www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/09/14 REVISED DATE : GC01L60 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 600V 12 160mA The GC01L06 utilized advanced processing techniques to achieve the possible on-resistance, extremely efficient and cost-effectiveness device. *Simple Drive Requirement *Low Gate Charge *Fast Switching Characteristics Description Features Package Dimensions D E S1 TO-92 A S E A T IN G PLANE b1 REF. L e1 e b C A S1 b b1 C Millimeter Min. Max. 4.45 4.7 1.02 0.36 0.51 0.36 0.76 0.36 0.51 REF. D E L e1 e Millimeter Min. Max. 4.44 4.7 3.30 3.81 12.70 1.150 1.390 2.42 2.