GC01L60
GC01L60 is N-CHANNEL ENHANCEMENT MODE POWER MOSFET manufactured by GTM.
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Pb Free Plating Product
ISSUED DATE :2005/09/14 REVISED DATE :
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
600V 12 160mA
The GC01L06 utilized advanced processing techniques to achieve the possible on-resistance, extremely efficient and cost-effectiveness device.
- Simple Drive Requirement
- Low Gate Charge
- Fast Switching Characteristics
Description
Features
Package Dimensions
D E S1
TO-92
S E A T IN G PLANE b1
REF.
L e1 e b
A S1 b b1 C
Millimeter Min. Max. 4.45 4.7 1.02 0.36 0.51 0.36 0.76 0.36 0.51
REF. D E L e1 e
Millimeter Min. Max. 4.44 4.7 3.30 3.81 12.70 1.150 1.390 2.42...
