Datasheet4U.com

GD103SD Datasheet PDF

GTM GD103SD

The GD103SD is designed for low forward voltage drop, guard ring construction for transient protection, negligible reverse recovery time and low reverse capacitance.
Part No. GD103SD
Datasheet GD103SD Download
Manufacturer
GTM
Description SWITCHING DIODE
Buy Stock & Price
GD103SD datasheet page 1 preview

DESCRIPTION

Package Dimensions REF. A A1 A2 D E HE Millimeter Min. Max. 0.85 1.05 0 0.10 0.80 1.00 1.15 1.45 1.60 1.80 2.30 2.70 REF. L b c Q1 Millimeter Min. Max. 0.20 0.25 0.10 0.40 0.40 0.18 0.15 BSC.

ABSOLUTE MAXIMUM RATINGS

at Ta = 25 Parameter Storage Temperature Peak Repetitive Reverse Voltage RMS Reverse Voltage Forward Continuous Current Repetitive Peak Forward Current(t 1.0s) Thermal Resistance Junction to Ambient Total Power Dissipation at Ta = 25 Symbol Tstg VR VR(RMS) IF IFRM R JA Ratings -65 ~ +125 40 28 350 1.5 625 225 Unit V V mA A /W mW PD Characteristics at Ta = 25 Parameter Reverse Breakdown Voltage Forward Voltage Reverse Leakage Current Total Capacitance Reverse Recover Time Symbol V(BR)R VF(1) VF(2) IR CT Trr Min. 40 Typ. 5.0 10 Max. 370 600 5.0 Unit V mV mV A pF ns IR=10 A IF=20mA IF=200mA VR=30V VR=0V, f=1MHz IF=IR=200mA, IR(Rec)=20mA, RL=100 Test Conditions 1/2 ISSUED DATE :2005/01/10 REVISED DATE : Characteristics Curve Important Notice: All rights are reserved.
GD103SD page 2 preview