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GD501SD Datasheet PDF

GTM GD501SD

The GD501SD is designed for low power rectification and high reliability.
Part No. GD501SD
Datasheet GD501SD Download
Manufacturer
GTM
Description SURFACE MOUNT SCHOTTKY BARRIER DIODE
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GD501SD datasheet page 1 preview

DESCRIPTION

S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E V O LT A G E 4 5 V, C U R R E N T 0 . 1 A Package Dimensions REF. A A1 A2 D E HE Millimeter Min. Max. 0.85 1.05 0 0.10 0.80 1.00 1.15 1.45 1.60 1.80 2.30 2.70 REF. L b c Q1 Millimeter Min. Max. 0.20 0.25 0.10 0.40 0.40 0.18 0.15 BSC. Parameter Junction Temperature Storage Temperature Maximum Peak Repetitive Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Peak Forward Surge Current at 8.3mSec single half sine-wave Typical Junction Capacitance between Terminal (Note 1) Maximum Average Forward Rectified Current Total Power Dissipation Symbol Tj Tstg VRRM VRMS VDC IFSM CJ Io PD Ratings +125 -40 ~ +125 45 32 40 1.0 6.0 0.1 225 Unit V V V A pF A mW Characteristics at Ta = 25 Symbol VF(1) VF(2) IR Max 0.55 0.34 30.0 Unit V V uA Test Condition IF = 100mA IF = 10 mA VR = 10V Characteristics Maximum Instantaneous Forward Voltage Maximum Instantaneous Forward Voltage Maximum Average Reverse Current 2. ESD sensitive product handling required.
GD501SD page 2 preview