GD751SD
GD751SD is SURFACE MOUNT SCHOTTKY BARRIER DIODE manufactured by GTM.
Description
S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E V O LT A G E 4 0 V, C U R R E N T 0 . 0 3 A
Package Dimensions
The GD751SD is designed for high speed switching for detection and high reliability.
REF. A A1 A2 D E HE
Millimeter Min. Max. 0.85 1.05 0 0.10 0.80 1.00 1.15 1.45 1.60 1.80 2.30 2.70
REF. L b c Q1
Millimeter Min. Max. 0.20 0.25 0.10 0.40 0.40 0.18
0.15 BSC.
Parameter Junction Temperature Storage Temperature Maximum Peak Repetitive Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Peak Forward Surge Current at 8.3m Sec single half sine-wave Typical Junction Capacitance between Terminal (Note 1) Maximum Average Forward Rectified Current Total Power Dissipation
Symbol Tj Tstg VRRM VRMS VDC IFSM CJ Io PD
Ratings +125 -40 ~ +125 40 28 40 0.2 2.0 0.03 225
Unit
V V V A p F A m W
Characteristics at Ta = 25
Symbol VF IR Max 0.37 0.5 Unit V u A Test Condition IF = 1m A VR = 30V
Characteristics Maximum Instantaneous Forward Voltage Maximum Average Reverse Current 2. ESD sensitive product handling required.
Notes: 1. Measured at 1.0 MHz and applied reverse voltage of 1.0 volt.
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ISSUED DATE :2004/09/20 REVISED DATE :
Characteristics Curve
Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
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